IRF7342TRPBF

MOSFET, 2P-Channel, 55V, 3.4A, 8-SOIC, advanced processing technique, Ultra Low On-Resistance

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Price:: US $0.23~0.25 / piece [Get Latest Price]

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	US $0.23~0.25

PartNumber:: IRF7342TRPBF

Brand:: International Rectifier - IR | Pack: SOP | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-09-01

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Part Number:IRF7342TRPBF
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Product Summary

The IRF7342TRPBF is from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This IRF7342TRPBF benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF7342TRPBF absolute maximum ratings: (1)Drain Source Voltage, VDS: -55V; (2)Continuous Drain Current, VGS @ 10V -3.4; (3)ID @ TC = 70℃ Continuous Drain Current, VGS @ 10V, ID @ TC = 25℃: -2.7A; (4)Pulsed Drain Current, IDM: -27A; (5)Power Dissipation, PD @TC = 25℃: 2.0W; (6)Power Dissipation, PD @TC = 70℃: 1.3W; (7)Linear Derating Factor: 0.016W/℃; (8)Gate-to-Source Voltage, VGS: ±20V; (9)Gate-to-Source Voltage Single Pulse tp<10μs, VGSM: 30V; (10)Single Pulse Avalanche Energy, EAS: 114; (11)Peak Diode Recovery dv/dt, dv/dt: 5.0V/ns; (12)Junction and Storage Temperature Range, TJ, TSTG: -55 to + 150℃.

Features

IRF7342TRPBF features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)Dual P-Channel Mosfet; (4)Surface Mount; (5)Available in Tape & Reel; (6)Dynamic dv/dt Rating; (7)Fast Switching; (8)Lead-Free.